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DOS is a critical new technology for device manufacturers increasingly struggling with materials for next generation devices, because diamond has been demonstrated to be both highly viable and cost effective for use in semiconductor manufacturing. The benefits of diamond enable many new micro and nanofabrication applications, including MEMS and traditional III-V devices, while its thermal conductivity and ability to be metalized also make it an ideal material for silicon semiconductor devices.

The sp3 Model 650 hot filament diamond deposition system provides uniform diamond growth over areas up to 350 mm by 375 mm. Using this system, sp3 offers DOS wafers, coated to a variety of specifications. sp3's diamond-on-silicon is available to customers via its foundry service for customer-supplied wafers.

The company also sells standard DOS wafers with various diamond grain characteristics and film thicknesses. These wafers can have microcrystalline or nanocrystalline films, and can be doped or undoped. The range of films available enables multiple applications to take advantage of the superior characteristics of diamond films. Since the DOS wafers are fabricated in a large area, hot-filament CVD deposition reactor, the process is commercially scalable from the start.

Click here for sp3's Diamond-on-Silicon Wafers brochure.

Click here for sp3's paper on the characterization of boron-doped micro- and nanocrystalline diamond films deposited by wafer-scale hot filament chemical vapor deposition for MEMS applications.

For additional information, contact us.